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savantic semiconductor product specification silicon pnp power transistors 2SA1265N d escription with to-3p(i) package complement to type 2sc3182 2sa1265 with short pin applications power amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector- base voltage open emitter -140 v v ceo collector- emitter voltage open base -140 v v ebo emitter-base voltage open collector -5 v i c collector current -10 a i b base current -1 a p t total power dissipation t c =25 100 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3p(i)) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1265N characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma ,i b =0 -140 v v cesat collector-emitter saturation voltage i c =-7a; i b =-0.7a -0.8 -2.0 v v be base-emitter voltage i c =-5a ; v ce =-5v -1.0 -1.5 v i cbo collector cut-off current v cb =-140v; i e =0 -5 a i ebo emitter cut-off current v eb =-5v; i c =0 -5 a h fe-1 dc current gain i c =-1a ; v ce =-5v 55 160 h fe-2 dc current gain i c =-5a ; v ce =5v 35 f t transition frequency i c =-1a ; v ce =-5v 30 mhz c ob output capacitance i e =0 ; v cb =10v ;f=1mhz 480 pf h fe-1 classifications r o 55-110 80-160
savantic semiconductor product specification 3 silicon pnp power transistors 2SA1265N package outline fig.2 outline dimensions(unindicated tolerance:0.10 mm)
savantic semiconductor product specification 4 silicon pnp power transistors 2SA1265N

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